top of page
IGN1030S3100
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1030S3100 | 1.03 | 1.03 | 3100 | 19 | 67 | 32µs, 4% | 75 | Input | PL124A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.03
3100
19
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
67
32µs, 4%
75
Input
IGN1030S3100 and IGN1030S3100S are high power GaN-on- SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They operate at 1030 MHz. Under 32ms, 4% duty cycle pulse conditions, they supply a minimum of 3100 W of peak output power, with typically > 19dB of associated gain and 67% efficiency. They operate from a 75 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
bottom of page