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IGN1214S6000
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1214S6000 | 1.2 | 1.4 | 6000 | 17 | 68 | 25µs, 1% | 125 | Input | PL124A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
6000
17
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
68
25µs, 1%
125
Input
IGN1214S6000 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern long-range radar systems. It supplies a minimum of 6000 W of peak output power, with typically >17 dB of associated gain and 68% efficiency. It operates from a 125 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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