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IGNP2631M2600
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGNP2631M2600 | 2.6 | 3.1 | 2600 | 2600 | 53 | 100µs, 1% | 100 | 4.76" x 2.0" |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.6
3.1
2600
2600
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
53
100µs, 1%
100
IGNP2631M2600 is a high power GaN-on-SiC RF power amplifier pallet that has been designed to suit the unique needs of S-Band Systems. It operates over the full 2.6 - 3.1 GHz frequency range. Under 100µs, 1% duty cycle pulse conditions it supplies a minimum of 2.6 kW of peak output power, with typically >14 dB of associated gain and 53% efficiency. It operates from a 100 V supply voltage.
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