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IGT1030S650
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGT1030S650 | 1.03 | 103 | 650 | 18.5 | 60 | 10µs, 4% | 50 | 50 | PM67A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
103
650
18.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
60
10µs, 4%
50
50
IGT1030S650 is a high power RF power transistor that has been designed to suit the unique needs of IFF/SSR avionics systems. It operates at 1030 MHz. Under 10µs pulse length, 4% duty cycle pulse conditions, it supplies a minimum of 650 W of peak output power, with typically 18.5 dB of associated gain and 60% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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