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IGT3135M135
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGT3135M135 | 3.1 | 3.5 | 135 | 13.5 | 55 | 300µs, 10% | 46 | 50 | PL44A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
3.1
3.5
135
13.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
300µs, 10%
46
50
IGT3135M135 and IGT3135M135S are high power GaN-on-SiC RF power transistors that are fully matched to 50W at both the input and output. They supply a minimum of 135W of peak output power, with typically >13.5dB of gain and 62% efficiency. They operate from a 46V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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