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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
4.4
5.2
60
11.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
46
CW
32
Input & Output
IGN4452CW60
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN4452CW60 | 4.4 | 5.2 | 60 | 11.5 | 46 | CW | 32 | Input & Output | PL32C1 |
IGN4452CW60 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of C-Band systems. It operates over the full bandwidth of 4.4 - 5.2 GHz. Under CW conditions, it supplies 60 W of RF output power with an associated 46% efficiency. It operates from a 32 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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