top of page
ILD1214EL40
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
---|---|---|---|---|---|---|---|---|---|
ILD1214EL40 | 1.2 | 1.4 | 40 | 14 | 42 | 16μs, 50% | 30 | Input | PL32A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
40
14
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
42
16μs, 50%
30
Input
![](https://static.wixstatic.com/media/3748d3_8c8cd4a47a5e4708b6c886014d59936d~mv2.png/v1/fill/w_480,h_270,al_c,q_85,usm_0.66_1.00_0.01,enc_avif,quality_auto/Image-empty-state.png)
ILD1214EL40 is a high power LDMOS transistor designed for L-band radar applications operating over the 1.215 - 1.400 GHz instantaneous frequency band. Under 16 μs / 50% pulsing conditions it easily supplies a minimum of 40 W of peak output power with over 12db gain. Since it operates under Class B or AB bias it exhibits a fairly linear Pin versus Pout transfer characteristic, which allows operation at reduced output power levels. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.
bottom of page