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ILD1011L200HV
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
ILD1011L200HV | 1.03 | 1.09 | 200 | 17 | 55 | 48x (32µs On, 18µs Off), 6.4% | 50 | Input | PL64A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.09
200
17
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
48x (32µs On, 18µs Off), 6.4%
50
Input
ILD1011L200HV is a high power LDMOS transistor designed for avionics systems operating at 1.03 - 1.09 GHz at ELM Mode S, 6.4% pulse conditions and 50V drain bias. This LDMOS FET device supplies a minimum of 200 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.
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